Low driving voltage in organic light-emitting diodes using MoO3 as an interlayer in hole transport layer

被引：32
|
作者：
Yook, Kyoung Soo [1 ]
Lee, Jun Yeob [1 ]
机构：
[1] Dankook Univ, Dept Polymer Sci & Engn, Yongin 448701, Kyeonggi, South Korea
来源：
SYNTHETIC METALS | 2009年 / 159卷 / 1-2期
关键词：
Low driving voltage; MoO3; interlayer; Interfacial energy barrier;
D O I：
10.1016/j.synthmet.2008.07.016
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Driving voltage of organic light-emitting diodes (OLEDs) was lowered by applying MoO3 as an interlayer between hole injection layer (HIL) and hole transport layer (HTL). MoO3 was effective as an interlayer between HIL and HTL due to its valence band of around 5.3 eV which is suitable for hole injection. Hole injection from HIL to HTL was enhanced by MoO3 interlayer and driving voltage of green fluorescent device could be lowered by 1.3 V at 1000cd/m(2) by using thin MoO3 interlayer. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码：69 / 71
页数：3
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