UV-induced desorption of oxygen at the TiO2 surface for highly sensitive room temperature O2 sensing

被引:24
|
作者
Wang, Yuhang [1 ,2 ]
Lai, Xubo [2 ]
Liu, Boyang [2 ]
Chen, Yibao [2 ]
Lu, Yanzhen [1 ]
Wang, Fengping [1 ]
Zhang, Liuwan [2 ]
机构
[1] Univ Sci & Technol Beijing, Sch Math & Phys, Dept Phys, Beijing 100083, Peoples R China
[2] Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
基金
中国博士后科学基金; 中国国家自然科学基金;
关键词
TiO2 thin film; Oxygen sensor; Desorption; Recovery rate; UV irradiation; GAS SENSOR; MOLECULAR-OXYGEN; DOPED TIO2; DISSOCIATION; TIO2(110); OXIDE; NANOCRYSTALS; ADSORPTION; VACANCY; LIGHT;
D O I
10.1016/j.jallcom.2019.04.231
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
TiO2 was widely considered as a promising material for gas sensing. However, developing TiO2 based O-2 sensors working at room temperature is still challenging owing to the difficulties of desorbing oxygen adatoms from the TiO2 surface. Here, the influence of the UV irradiation on the desorption of the surface oxygen on the TiO2 films was investigated by using the atmosphere dependent electric transport, Kelvin probe microscopy and x-ray photoelectron spectroscopy. A lasting high conductivity and high Fermi level of the TiO2 film were observed after the UV irradiation in vacuum, which can be drastically suppressed by a subsequent O-2 gas exposure. Thus the UV induced desorption of the surface oxygen is evidenced. Moreover a surface charge transfer model is proposed based on DFT calculations to account for the photodesorption mechanism. Utilizing such effect, the film conductivity was increased and the adsorption sites were actively recovered upon UV irradiation, thereby greatly enhanced the O-2 gas sensitivity. Our findings provided a way to optimize the performance of the O-2 sensors at room temperature with low cost and high efficiency. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码:583 / 589
页数:7
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