Efficiency improvement of light-emitting diodes with a developed electron blocking layer structure and its optimization

被引：10
|
作者：
Wang, Tian-Hu [1 ,2 ]
Xu, Jin-Liang [1 ,2 ]
Wang, Xiao-Dong [1 ,3 ]
机构：
[1] N China Elect Power Univ, State Key Lab Alternate Elect Power Syst Renewabl, Beijing 102206, Peoples R China
[2] N China Elect Power Univ, Being Key Lab New & Renewable Energy, Beijing 102206, Peoples R China
[3] N China Elect Power Univ, Beijing Key Lab Multiphase Flow Arid Heat Transfe, Beijing 102206, Peoples R China
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2013年 / 47卷
基金：
中国国家自然科学基金;
关键词：
MULTIQUANTUM BARRIER; SEMICONDUCTORS; SUPERLATTICES; PERFORMANCE;
D O I：
10.1016/j.physe.2012.09.024
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the internal quantum efficiency (IQE) of light-emitting diodes (LEDs) with an added AlxGa1-xN/GaN multi-quantum-barrier as the electron blocking layer (EBL) and optimize the structure parameter. Comparison was performed under same running conditions for LEDs with a single-barrier EBL (conventional design) and multi-quantum-barrier EBL. The numerical simulation shows that the IQE is significantly increased to 63.7% for the optimized structure parameters due to the modified energy band diagrams which are responsible for the enhanced carrier concentration in the active region. (C) 2012 Elsevier B.V. All rights reserved.
引用
收藏
页码：51 / 58
页数：8
相关论文
共 50 条
  • [31] Optimizing the PMMA Electron-Blocking Layer of Quantum Dot Light-Emitting Diodes
    Zvaigzne, Mariya
    Alexandrov, Alexei
    Tkach, Anastasia
    Lypenko, Dmitriy
    Nabiev, Igor
    Samokhvalov, Pavel
    NANOMATERIALS, 2021, 11 (08)
  • [32] Design of electron blocking layer with electron stabilizing unit for improved efficiency and lifetime in blue fluorescent organic light-emitting diodes
    Jeong, Sook-Hee
    Lee, Kyung Hyung
    Lee, Jun Yeob
    JOURNAL OF INDUSTRIAL AND ENGINEERING CHEMISTRY, 2019, 74 : 71 - 78
  • [33] Improvement of Performance in p-Side Down InGaN/GaN Light-Emitting Diodes with Graded Electron Blocking Layer
    Li, Zhiqiang
    Lestrade, Michel
    Xiao, Yegao
    Li, Zhanming Simon
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2011, 50 (08)
  • [34] Efficiency enhancement of blue InGaN/GaN light-emitting diodes with an AlGaN-GaN-AlGaN electron blocking layer
    Xia, Chang Sheng
    Li, Z. M. Simon
    Lu, Wei
    Zhang, Zhi Hua
    Sheng, Yang
    Hu, Wei Da
    Cheng, Li Wen
    JOURNAL OF APPLIED PHYSICS, 2012, 111 (09)
  • [35] Efficiency Improvement of Organic Light-Emitting Diodes depending on the Thickness Variation of BCP Layer used for Electron Transport
    Kim, Won-Jong
    Choi, Hyun-Min
    Kim, Joung-Sik
    Kim, Tae-Wan
    Hong, Jin-Woong
    ICPADM 2009: PROCEEDINGS OF THE 9TH INTERNATIONAL CONFERENCE ON PROPERTIES AND APPLICATIONS OF DIELECTRIC MATERIALS, VOLS 1-3, 2009, : 1219 - +
  • [36] Improvement in light-output efficiency of InGaN/GaN multiple-quantum well light-emitting diodes by current blocking layer
    Huh, C
    Lee, JM
    Kim, DJ
    Park, SJ
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (05) : 2248 - 2250
  • [37] Rational Superlattice Electron Blocking Layer Design for Boosting the Quantum Efficiency of 371 nm Ultraviolet Light-Emitting Diodes
    Du, Peng
    Zhao, Xiaoyu
    Qian, Yinzuo
    Liu, Pengfei
    Tang, Bin
    Shi, Lang
    Tao, Guoyi
    Zhou, Shengjun
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (12) : 6255 - 6261
  • [38] Upping the internal quantum efficiency of green light-emitting diodes by employing a graded AlGaN barrier and an electron blocking layer
    Usman, Muhammad
    Anwar, Abdur-Rehman
    Munsif, Munaza
    Ullah, Ihsan
    IET OPTOELECTRONICS, 2021, 15 (01) : 69 - 74
  • [39] Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes
    Lu, Yu-Hsuan
    Fu, Yi-Keng
    Huang, Shyh-Jer
    Su, Yan-Kuin
    Wang, Kang L.
    Pilkuhn, Manfred H.
    Chu, Mu-Tao
    JOURNAL OF APPLIED PHYSICS, 2014, 115 (11)
  • [40] CONTROLLED ELECTRON LEAKAGE IN ELECTRON BLOCKING LAYER FREE InGaN/GaN NANOWIRE LIGHT-EMITTING DIODES
    Velpula, Ravi Teja
    Jain, Barsha
    Lenka, Trupti Ranjan
    Hieu Pham Trung Nguyen
    FACTA UNIVERSITATIS-SERIES ELECTRONICS AND ENERGETICS, 2021, 34 (03) : 393 - 400
12345