A physical channel-potential and drain-current model for asymmetric dual-gate a-IGZO TFTs

被引：0
|
作者：
Cai, Minxi [1 ]
Yao, Ruohe [1 ]
机构：
[1] South China Univ Technol, Sch Elect & Informat Engn, Guangzhou 510641, Guangdong, Peoples R China
来源：
SCIENCE CHINA-INFORMATION SCIENCES | 2019年 / 62卷 / 06期
基金：
中国国家自然科学基金;
关键词：
8;
D O I：
10.1007/s11432-018-9659-0
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
引用
收藏
页数：3
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