RF-sputter deposition of Zn-Ge nitride thin films

Nitride Zn-Ge thin films were deposited by reaction sputtering. Black conducting (Zn1-xGex)(3)N2+delta with x less than or equal to 0.27 was obtained in a compositional range below 29 wt% Ge against the total metal content. Greenish pale yellow ZnGeN2 was observed in a range of 30-60 wt% Ge. This crystallized in a hexagonal lattice of a comparable size to the isoelectronic GaN. Its solid solution range seems to be very narrow and its band gap was estimated to be about 3.1 eV. Ge3N4, like amorphous (Ge1-yZny)(3)N4-gamma with y less than or equal to 0.43 films, shows pale yellow color above the compositional range of 60 wt% Ge. (C) 1999 Elsevier Science Ltd. All rights reserved.