High-Performance, Vacuum-Free, and Self-Powered CsPbIBr2 Photodetectors Boosted by Ultra-Wide-Bandgap Ga2O3 Interlayer

被引：22
|
作者：
Zhang, Zeyulin [1 ,2 ]
Zhang, Wentao [1 ]
Jiang, Qubo [1 ]
Wei, Ziming [1 ]
Zhang, Yuting [1 ]
You, Hai Long [2 ]
Deng, Minyu [2 ]
Zhu, Weidong [2 ]
Zhang, Jincheng [2 ]
Zhang, Chunfu [2 ]
Hao, Yue [2 ]
机构：
[1] Guilin Univ Elect Technol, Guangxi Key Lab Optoelect Informat Proc, Guilin 541004, Peoples R China
[2] Xidian Univ, State Key Discipline Lab Wide Band Gap Semicond T, Xian 710071, Peoples R China
来源：
IEEE ELECTRON DEVICE LETTERS | 2020年 / 41卷 / 10期
基金：
中国国家自然科学基金;
关键词：
Photodetector; Ga2O3; interlayer; self-powered; all-inorganic perovskite; CsPbIBr2; PEROVSKITE; LAYER;
D O I：
10.1109/LED.2020.3017369
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this letter, ultra-wide-bandgap Ga2O3 as the interlayer is grown by mist chemical vapor deposition (mist-CVD) between perovskite and TiO2 electron transport layer in perovskite photodetectors (PDs). To get a stable working condition and low-cost fabrication, all-inorganic CsPbIBr2 is adopted and the expensive vacuum-deposited metal electrode is replaced by printing carbon paste. The vacuum-free, self-powered CsPbIBr2 PD with Ga2O3 interlayer achieves an obviously improved performance, with a low dark current of 4.15 x 10(-9) A, high responsibility of 0.22 A/W, fast response time of 1.83 mu s, and high peak specific detectivity of 1.83x10(12) Jones. This work provides a strategy to develop high-performance self-powered PDs with the ultra-wide-bandgap Ga2O3 interlayer and a reduced cost.
引用
收藏
页码：1532 / 1535
页数：4
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