Migration of 3He impurities along dislocation lines in 4He single crystals

被引：5
|
作者：
Rojas, Xavier [1 ]
Haziot, Ariel [1 ]
Balibar, Sebastien [2 ]
机构：
[1] UPMC Paris 06, CNRS, Ecole Normale Super, Lab Phys Stat, 24 Rue Lhomond, F-75231 Paris 05, France
[2] Univ Paris Diderot, F-75231 Paris 05, France
来源：
26TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT26), PTS 1-5 | 2012年 / 400卷
关键词：
SOLID HE-4;
D O I：
10.1088/1742-6596/400/1/012062
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have studied acoustic resonances in He-4 single crystals in the temperature region 20 < T < 300 mK where a large softening occurs due to the unbinding of dislocations from He-3 impurities. Here we present an analysis of the dependence of resonance frequencies on the sound amplitude, that is on the acoustic stress in the crystal. Above a threshold of order 10(-6) bar, this stress is able to unbind dislocations from impurities. Our results indicate that He-3 impurities diffuse along dislocations at 60 mK but not at 23 mK.
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页数：4
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