The energy transport and the drift diffusion equations as relaxation limits of the hydrodynamic model for semiconductors

被引：62

作者：

Gasser, I

Natalini, R

机构：

[1] Tech Univ Berlin, Fachbereich Math, D-10623 Berlin, Germany

[2] Ist Applicaz Calcolo M Picone, I-00161 Rome, Italy

来源：

QUARTERLY OF APPLIED MATHEMATICS | 1999年 / 57卷 / 02期

关键词：

D O I：

10.1090/qam/1686190

中图分类号：

O29 [应用数学];

学科分类号：

070104 ;

摘要：

Two relaxation limits of the hydrodynamic model for semiconductors are investigated. Using the compensated compactness tools we show the convergence of (scaled) entropy solutions of the hydrodynamic model to the solutions of the energy transport and the drift-diffusion equations, according respectively to different time scales.

引用

页码：269 / 282

页数：14

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