Atomic layer deposition of TiO2 from TiCl4 and O3

被引：64

作者：

Aarik, Lauri ^{[1
]}

Arroval, Tonis ^{[1
]}

Rammula, Raul ^{[1
]}

Maendar, Hugo ^{[1
]}

Sammelselg, Vaino ^{[1
,2
]}

Aarik, Jaan ^{[1
]}

机构：

[1] Univ Tartu, Inst Phys, EE-51014 Tartu, Estonia

[2] Univ Tartu, Inst Chem, EE-50411 Tartu, Estonia

来源：

THIN SOLID FILMS | 2013年 / 542卷

关键词：

Atomic layer deposition; Titanium dioxide; Crystallization; Surface morpholgy; Ozoone; Titanium chloride; TRANSMISSION ELECTRON-MICROSCOPY; THIN-FILMS; TITANIUM-DIOXIDE; IN-SITU; MASS-SPECTROMETRY; STAINLESS-STEEL; RU ELECTRODE; GROWTH; OXIDE; TII4;

D O I：

10.1016/j.tsf.2013.06.074

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Atomic layer deposition (ALD) of thin films from TiCl4 and O-3 on Si(100) substrates was investigated. The growth of TiO2 was obtained at substrate temperatures of 225-600 degrees C from these hydrogen-free precursors. Formation of anatase phase in the films was observed at 250-600 degrees C. In addition, the rutile phase was revealed in thicker films deposited at 600 degrees C. Compared to the well studied TiCl4-H2O ALD process the TiCl4-O-3 process allowed higher growth rate at 275-600 degrees C. In addition, relatively low surface roughness was obtained for thicker (>50 nm) films of the anatase structure deposited from TiCl4 and O-3 at 350-400 degrees C. Therefore TiCl4 and O-3 appeared to be a good precursor combination for ALD of TiO2, particularly for applications that require low concentration of hydrogen contamination. (C) 2013 Elsevier B.V. All rights reserved.

引用

页码：100 / 107

页数：8

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