Change in electrical resistance caused by stress-induced migration

被引：2
|
作者：
Aoyagi, M [1 ]
机构：
[1] Nippon Inst Technol, Dept Elect & Elect Engn, Minami Saitama, Saitama 3458501, Japan
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2006年 / 24卷 / 01期
关键词：
D O I：
10.1116/1.2162579
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Changes in the electrical resistance of aluminum and copper interconnections caused by stress-induced migration were studied using simple numerical simulations. When residual thermal stress in an interconnection is not sufficiently relaxed, the electrical resistance increases with storage time; subsequently, the interconnection disconnects suddenly after a set period. In this case, it is difficult to determine the lifetime of an interconnection by measuring the electrical resistance in advance because of this abrupt increase in resistance. The lifetime of copper interconnections is longer than that of aluminum interconnections. Simulation results for aluminum interconnections agree with high-temperature storage tests. (c) 2006 American Vacuum Society.
引用
收藏
页码：250 / 254
页数：5
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