Ultrathin resist films patterning using a synchrotron radiation lithography system

被引：0
|
作者：
Lu, W
Gu, N
Wei, Y
Tian, YC
机构：
[1] NANYANG TECHNOL UNIV, SCH ELECT & ELECT ENGN, SINGAPORE 639798, SINGAPORE
[2] SOUTHEAST UNIV, NATL LAB MOL & BIOMOL ELECT, NANJING 210096, PEOPLES R CHINA
[3] UNIV SCI & TECHNOL CHINA, NATL SYNCHROTRON RADIAT LAB, HEFEI 230029, PEOPLES R CHINA
来源：
VACUUM | 1997年 / 48卷 / 01期
关键词：
D O I：
10.1016/S0042-207X(96)00239-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Ultrathin polymethylmethacrylate (PMMA) films with a width of 17-59.5 nm have been prepared for X-ray resist by Langmuir-Blodgett (LB) technique on a trough using a steady laminar flowing subphase for monolayer compression. Using a synchrotron radiation (SR) lithography system as an exposure tool, patterns with 0.2 mu m critical dimensions have been obtained, limited to the mask used. Copyright (C) 1996 Elsevier Science Ltd.
引用
收藏
页码：103 / 105
页数：3
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