A monolithic integrated pressure sensor

被引：0
|
作者：
Zhang, Zhengyuan [1 ]
Yang, Cao
Mei, Yong
Feng, Zhicheng
Li, Xiaogang
Li, Jiangen
Hu, Guoxiang
机构：
[1] Natl Lab Analog Integrated Circuits, Chongqing 400060, Peoples R China
来源：
MICRO-NANO TECHNOLOGY XIII | 2012年 / 503卷
关键词：
pressure sensor; CrSi resistor networks; temperature compensation;
D O I：
10.4028/www.scientific.net/KEM.503.8
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this paper, focused on especial requirement monolithic integrated resistance pressure sensor, pressure structure, signal processing circuits and process compatible technology of sensor and IC were studied. The feebleness pressure signal monitoring circuits was designed, high precision CrSi resistor networks was used for temperature compensation of resistance pressure sensor, and a monolithic integrated pressure sensor only 2.3 X 2.3mm(2) was obtained. The measuring results are as follows, measurement range is 5-115kPa, the maximum Vout is more than 4.5V, sensitivity is 1.2%.
引用
收藏
页码：8 / +
页数：2
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