Studies of N-Doped p-ZnO Layers Grown on c-Sapphire by Radical Source Molecular Beam Epitaxy

被引：7

作者：

Ivanov, S. V. ^{[1
]}

El-Shafr, A. ^{[1
]}

Al-Suleiman, M. ^{[1
]}

Bakin, A. ^{[1
]}

Waag, A. ^{[1
]}

Lyublinskaya, O. G. ^{[2
]}

Shmidt, N. M. ^{[2
]}

Listoshin, S. B. ^{[2
]}

Kyutt, R. N. ^{[2
]}

Ratnikov, V. V. ^{[2
]}

Terentyev, A. Ya. ^{[2
]}

Ber, B. Ya. ^{[2
]}

Komissarova, T. A. ^{[3
]}

Ryabova, L. I. ^{[3
]}

Khokhlov, D. R. ^{[3
]}

机构：

[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol, D-38106 Braunschweig, Germany

[2] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 196140, Russia

[3] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119992, Russia

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2008年 / 53卷 / 05期

关键词：

Molecular beam epitaxy; Plasma activated oxygen; Nitrogen; ZnO layers; p-doping;

D O I：

10.3938/jkps.53.3016

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the fabrication of p-type ZnO:N layers using radical-source molecular beam epitaxy and post-growth annealing of the samples. Plasma-activated oxygen and nitrogen fluxes are supplied via a single plasma cell. The combination of low growth temperature (350 - 400 degrees C), slightly O-rich conditions, and post-growth annealing in the range of 650 - 800 degrees C results in efficient nitrogen p-doping with Hall hole concentration 3 x 10(17) cm(-3). The details of the structural and the electrical characterizations of the films are discussed.

引用

页码：3016 / 3020

页数：5

共 50 条

[21] Structural perfection of heteroepitaxial silicon layers grown on sapphire by sublimation-source molecular beam epitaxy
Denisov, S. A.
Svetlov, S. P.
Chalkov, V. Yu.
Shengurov, V. G.
Pavlov, D. A.
Korotkov, E. V.
INORGANIC MATERIALS, 2007, 43 (04) : 331 - 337
[22] Layer by layer growth of ZnO on (0001) sapphire substrates by radical-source molecular beam epitaxy
El-Shaer, A.
Bakin, A.
Mofor, A. Che
Stoimenos, J.
Pecz, B.
Waag, A.
SUPERLATTICES AND MICROSTRUCTURES, 2007, 42 (1-6) : 158 - 164
[23] Molecular Beam Epitaxy of Mixed Dimensional InGaSe/GaSe Hybrid Heterostructures on C-Sapphire
Tran, Quynh Trang
Huynh, Thi Bich Tuyen
Pham, Tu Huynh
Nallasani, Umeshwar Reddy
Wang, Hong-Jyun
Diep, Nhu Quynh
Chou, Wu-Ching
Le, Van-Qui
Wei, Kung-Hwa
Vu, Thanh Tra
ACS APPLIED ELECTRONIC MATERIALS, 2024, 6 (10) : 7448 - 7455
[24] Effects of annealing of MgO buffer layer on structural quality of ZnO layers grown by P-MBE on c-sapphire
Setiawan, A
Ko, HJ
Yao, T
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2003, 6 (5-6) : 371 - 374
[25] Polarity of GaN grown on sapphire by molecular beam epitaxy with different buffer layers
Huang, D
Visconti, P
Reshchikov, MA
Yun, F
King, T
Baski, AA
Litton, CW
Jasinski, J
Liliental-Weber, Z
Morkoç, H
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2001, 188 (02): : 571 - 574
[26] Photoreflectance and photoluminescence of exciton-polaritons in a ZnO epilayer grown on the a-face of sapphire by radical-source molecular-beam epitaxy
Chichibu, SF
Sota, T
Fons, PJ
Iwata, K
Yamada, A
Matsubara, K
Niki, S
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2002, 192 (01): : 171 - 176
[27] Characteristics of p-type ZnSe layers grown by molecular beam epitaxy with radical doping
Ohkawa, Kazuhiro, 1600, (30):
[28] Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy
Nishida, Keisuke
Xu, Xuejun
Sawano, Kentarou
Maruizumi, Takuya
Shiraki, Yasuhiro
THIN SOLID FILMS, 2014, 557 : 66 - 69
[29] Persistent photoconductivity in p-type ZnO(N) grown by molecular beam epitaxy
Polyakov, A. Y.
Smirnov, N. B.
Govorkov, A. V.
Belogorokhov, A. I.
Kozhukhova, E. A.
Markov, A. V.
Osinsky, A.
Dong, J. W.
Pearton, S. J.
APPLIED PHYSICS LETTERS, 2007, 90 (13)
[30] Defect characterization in ZnO layers grown by plasma-enhanced molecular-beam epitaxy on (0001) sapphire substrates
Vigué, F
Vennéguès, P
Vézian, S
Laügt, M
Faurie, JP
APPLIED PHYSICS LETTERS, 2001, 79 (02) : 194 - 196

← 1 2 3 4 5 →