THz detection by multi-layered topological insulator

被引：0

作者：

Makino, K. ^{[1
]}

Kuromiya, S. ^{[2
]}

Takano, K. ^{[2
]}

Kato, K. ^{[2
]}

Nakajima, M. ^{[2
]}

Iida, H. ^{[3
]}

Kinoshita, M. ^{[3
]}

Saito, Y. ^{[1
]}

Tominaga, J. ^{[1
]}

Nakano, T. ^{[1
]}

机构：

[1] AIST, Nanoelect Res Inst, Tsukuba, Ibaraki 3058565, Japan

[2] Osaka Univ, Inst Laser Engn, Suita, Osaka 5650871, Japan

[3] AIST, Natl Metrol Inst Japan, Tsukuba, Ibaraki 3058563, Japan

来源：

2016 41ST INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ) | 2016年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose electrical THz detection based on topological insulators which have Dirac electrons. Among them, multi-layered topological insulator system is expected to stack topological interface states and hence enhancement of photo absorption is likely to be realized. GeTe/Sb2Te3 interfacial phase change memory materials (iPCM) were used and THz-induced electrical response was measured. As a result, we found that the irradiation of THz pulse causes decrease in the resistance of the device. It was found that the sensitivity of the device can be enhanced by increase of repetition number of iPCM due to the multiplication of topological states.

引用

页数：2

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