Size-correction Technique for k.p Simulation of Silicon Quantum Dots

被引:0
|
作者
Gomez-Campos, F. M. [1 ]
Rodriguez-Bolivar, S. [1 ]
Carceller, J. E. [1 ]
机构
[1] Univ Granada, Fac Ciencias, Dept Elect & Tecnol Comp, E-18071 Granada, Spain
关键词
D O I
10.1109/CSEW.2008.49
中图分类号
TP3 [计算技术、计算机技术];
学科分类号
0812 ;
摘要
In this work we propose a correction to the Effective Mass approach (EMA), to be used in Si quantum dot simulations. With this technique we obtained results comparable to those calculated by the Tight-Binding method (TB). We used this new approach to obtain the hole spectra in spherical quantum dots by, means of a fast algorithm, thus improving the accuracy of the EMA.
引用
收藏
页码:318 / 323
页数:6
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