Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

被引:21
|
作者
Shim, WY [1 ]
Jeon, KA
Lee, KI
Lee, SY
Jung, MH
Lee, WY
机构
[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea
[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea
[3] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea
关键词
diluted magnetic semiconductors (DMSs); Mn-doped ZnO; anomalous Hall effect (AHE); pulsed laser deposition (PLD); oxygen pressure; ferromagnetism;
D O I
10.1007/s11664-006-0112-2
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700 degrees C and 800 degrees C under 10(-1) torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10(-3) torr disappeared at 300 K. The large positive magnetoresistance (MR), similar to 10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700 degrees C under 10(-1) Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.
引用
收藏
页码:635 / 640
页数:6
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