Room-temperature ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition

被引：21

作者：

Shim, WY ^{[1
]}

Jeon, KA

Lee, KI

Lee, SY

Jung, MH

Lee, WY

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[3] Korea Basic Sci Inst, Quantum Mat Res Team, Taejon 305333, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2006年 / 35卷 / 04期

关键词：

diluted magnetic semiconductors (DMSs); Mn-doped ZnO; anomalous Hall effect (AHE); pulsed laser deposition (PLD); oxygen pressure; ferromagnetism;

D O I：

10.1007/s11664-006-0112-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ferromagnetic ordering in Mn-doped ZnO thin films grown by pulsed laser deposition (PLD) as a function of oxygen pressure and substrate temperature has been investigated. Room-temperature ferromagnetic behaviors in the Mn-doped ZnO films grown at 700 degrees C and 800 degrees C under 10(-1) torr in oxygen pressure were found, whereas ferromagnetic ordering in the films grown under 10(-3) torr disappeared at 300 K. The large positive magnetoresistance (MR), similar to 10%, was observed at 5 K at low fields and small negative MR was observed at high fields, irrespective of oxygen pressure. In particular, anomalous Hall effect (AHE) in the Mn-doped ZnO film grown at 700 degrees C under 10(-1) Torr has been observed up to 210 K. In this work, the observed AHE is believed to be further direct evidence demonstrating that the Mn-doped ZnO thin films are ferromagnetic.

引用

页码：635 / 640

页数：6

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