Growth and characterization of pure and Pr3+-doped CS4PbBr6 crystals

被引:49
|
作者
Velazquez, Matias [1 ]
Ferrier, Alban [1 ]
Pechev, Stanislas [2 ]
Gravereau, Pierre [2 ]
Chaminade, Jean-Pierre [2 ]
Portier, Xavier [1 ]
Moncorge, Richard [1 ]
机构
[1] Univ Caen, CNRS CEA ENSICAEN, UMR 6252, Ctr Rech Ions Mat & Photon, 6 Blvd Marechal Juin, F-14050 Caen 4, France
[2] CNRS, UPR 9048, ICMCB, F-33608 Pessac, France
关键词
Crystal structure; Bridgman technique; Growth from high-temperature solution; Halides; Solid-state lasers;
D O I
10.1016/j.jcrysgro.2008.10.003
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Centimeter-sized single crystals of pure and Pr3+-doped Cs4PbBr6 were successfully grown using a high-temperature solution (HTS)-based vertical Bridgman-Stockbarger method in silica ampoules sealed under Ar gas. The resulting single crystals are bright orange transparent, non-hygroscopic, with a low phonon energy and a wide transparency in the middle infrared (MIR) region. We present the growth conditions together with a characterization of the single crystals by means of calorimetry measurements. room temperature single crystal and powder X-ray diffraction (XRD), Raman, visible and Fourier-transform infrared (FT-IR) spectroscopies. Cs4PbBr6 crystallizes at room temperature in the trigonal space group R-3c, with a = b = 13.7219(2) angstrom, c = 17.3153(3)angstrom, alpha = beta = 90 degrees, gamma = 120 degrees and Z = 6. Pr3+ ions can be dissolved into Cs4PbBr6 crystals, resulting in broad MIR absorption bands. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:5458 / 5463
页数:6
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