Enhancement of light extraction efficiency in sub-300 nm nitride thin-film flip-chip light-emitting diodes

被引：17

作者：

Lachab, M. ^{[1
,2
]}

Asif, F. ^{[2
]}

Zhang, B. ^{[1
]}

Ahmad, I. ^{[1
]}

Heidari, A. ^{[1
]}

Fareed, Q. ^{[1
]}

Adivarahan, V. ^{[1
]}

Khan, A. ^{[2
]}

机构：

[1] Nitek Inc, Columbia, SC 29201 USA

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

来源：

SOLID-STATE ELECTRONICS | 2013年 / 89卷

基金：

美国国家科学基金会;

关键词：

AlGaN/AlGaN multiple quantum wells; Deep-UV LEDs; Laser lift-off; Light extraction efficiency;

D O I：

10.1016/j.sse.2013.07.010

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on the improved light extraction efficiency of 287 nm small periphery AlGaN/AlGaN thin-film flip-chip (TFFC) light-emitting diodes (LEDs) fabricated using the laser lift-off technique. After sapphire substrate removal, the exposed AlN N-face was etched in a KOH solution. The result was a 1.5-fold increase in the TFFC device output power at 20 mA dc current injection, which was attributed to the AlN surface texturing. TFFC die encapsulation process produced an additional 1.34-fold enhancement of the emitted light power. More importantly, the encapsulated thin-film LEDs exhibited a similar reliability performance compared to encapsulated conventional FC LEDs processed from the same epiwafer, and with no noticeable degradation of the encapsulating material optical properties. (C) 2013 Elsevier Ltd. All rights reserved.

引用

页码：156 / 160

页数：5

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