High-Frequency TaOx-Based Compact Oscillators

被引：29

作者：

Sharma, Abhishek A. ^{[1
]}

Li, Yunlu ^{[1
]}

Skowronski, Marek ^{[2
]}

Bain, James A. ^{[1
]}

Weldon, Jeffrey A. ^{[1
]}

机构：

[1] Carnegie Mellon Univ, Dept Elect & Comp Engn, Pittsburgh, PA 15213 USA

[2] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2015年 / 62卷 / 11期

基金：

美国国家科学基金会;

关键词：

One transistor; one resistor (1T1R); compact oscillator; filament dynamics; filament formation; forming; high frequency; metal-insulator transition; oscillatory neural network (ONN); oxide oscillators; resistive random access memory (RRAM); TaOx;

D O I：

10.1109/TED.2015.2475623

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we demonstrate three key features of oxide-based nano-oscillators: 1) the observation of threshold switching and filamentary oscillations in TaOx; 2) the highest frequency achieved by oxide-based oscillators; and 3) a study with linear (resistor) and nonlinear (transistor) ballasts to clearly understand the role of filament dynamics in scaling. These oscillators show frequency tunability over the range of 20 kHz-250 MHz, with 250 MHz being the highest reported frequency for this class of oscillators. Different types of ballasts show frequency tunability using two distinct methods: 1) by tuning the channel resistance of the transistor and 2) by increasing the rail voltage across the ballast-device pair. This sheds new light on the oscillator dynamics for dense oscillator arrays aimed at oscillatory neural networks and other applications.

引用

页码：3857 / 3862

页数：6

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