Fabrication of GaN-based LEDs with 22° undercut sidewalls by inductively coupled plasma reactive ion etching

被引：1

作者：

Wang Bo ^{[1
,2
]}

Su Shi-Chen ^{[1
]}

He Miao ^{[1
]}

Chen Hong ^{[2
]}

Wu Wen-Bo ^{[1
]}

Zhang Wei-Wei ^{[1
]}

Wang Qiao ^{[1
]}

Chen Yu-Long ^{[1
]}

Gao You ^{[1
]}

Zhang Li ^{[1
]}

Zhu Ke-Bao ^{[1
]}

Lei Yan ^{[1
]}

机构：

[1] S China Normal Univ, Inst Optoelect Mat & Technol, Lab Nanophoton Funct Mat & Devices, Guangzhou 510631, Guangdong, Peoples R China

[2] Chinese Acad Sci, Key Lab Renewable Energy, Beijing Key Lab New Energy Mat & Devices, Beijing Natl Lab Condense Matter Phys,Inst Phys, Beijing 100190, Peoples R China

来源：

CHINESE PHYSICS B | 2013年 / 22卷 / 10期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

GaN; light-emitting diode (LED); undercut; LIGHT-EMITTING-DIODES; NITRIDE-BASED LEDS; EXTRACTION;

D O I：

10.1088/1674-1056/22/10/106802

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We use a simple and controllable method to fabricate GaN-based light-emitting diodes (LEDs) with 22 degrees undercut sidewalls by the successful implementation of the inductively coupled plasma reactive ion etching (ICP-RIE). Our experiment results show that the output powers of the LEDs with 22 degrees undercut sidewalls are 34.8 mW under a 20-mA current injection, 6.75% higher than 32.6 mW, the output powers of the conventional LEDs under the same current injection.

引用

页数：4

共 50 条

[21] Deep, vertical etching for GaAs using inductively coupled plasma/reactive ion etching
Booker, Katherine
Mayon, Yahuitl Osorio
Jones, Christopher
Stocks, Matthew
Blakers, Andrew
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2020, 38 (01):
[22] Formation of distinctive structures of GaN by inductively-coupled-plasma and reactive ion etching under optimized chemical etching conditions
Okada, N.
Nojima, K.
Ishibashi, N.
Nagatoshi, K.
Itagaki, N.
Inomoto, R.
Motoyama, S.
Kobayashi, T.
Tadatomo, K.
AIP ADVANCES, 2017, 7 (06):
[23] Fabrication of GaN-Based resonant cavity LEDs
Maaskant, P
Akhter, M
Roycroft, B
O'Carroll, E
Corbett, B
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 192 (02): : 348 - 353
[24] The GaN-Based Light Emitting Diode Grown on Nanopattern Sapphire Substrate Prepared by Inductively Coupled Plasma Etching
Lin, Jyun-Hao
Huang, Shyh-Jer
Su, Yan-Kuin
Huang, Kai-Wen
IEEE TRANSACTIONS ON PLASMA SCIENCE, 2014, 42 (12) : 3792 - 3796
[25] Inductively coupled plasma reactive ion etching of ZnO films in HBr/Ar plasma
Min, Su Ryun
Cho, Han Na
Li, Yue Long
Chung, Chee Won
THIN SOLID FILMS, 2008, 516 (11) : 3521 - 3529
[26] Simple and Rapid Fabrication Process of Porous Silicon Surface Using Inductively Coupled Plasma Reactive Ion Etching
Sugaya, T.
Yoon, D. H.
Yamazaki, H.
Nakanishi, K.
Sekiguchi, T.
Shoji, S.
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2020, 29 (01) : 62 - 67
[27] Gallium nitride nanorods fabricated by inductively coupled plasma reactive ion etching
Yu, CC
Chu, CF
Tsai, JY
Huang, HW
Hsueh, TH
Lin, CF
Wang, SC
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2002, 41 (8B): : L910 - L912
[28] Modeling of deep reactive ion etching by inductively coupled plasma with string algorithm
Department of Applied Physics, Hefei University of Technology, Hefei 230009, China
Zhenkong Kexue yu Jishu Xuebao, 2008, 5 (481-485):
[29] Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching
Yuting Zheng
Jinlong Liu
Ruoying Zhang
Aude Cumont
Jue Wang
Junjun Wei
Chengming Li
Haitao Ye
Journal of Materials Research, 2020, 35 : 462 - 472
[30] Inductively Coupled Plasma Reactive Ion Etching of III-Nitride Semiconductors
Shah, A. P.
Laskar, M. R.
Rahman, A. A.
Gokhale, M. R.
Bhattacharya, A.
SOLID STATE PHYSICS, VOL 57, 2013, 1512 : 494 - 495

← 1 2 3 4 5 →