High-quality ZnO thin film grown on sapphire by hydrothermal method

被引：18

作者：

Wu, Huaihao ^{[1
]}

Hu, Zuofu ^{[1
]}

Li, Bin ^{[1
]}

Wang, Hailong ^{[1
]}

Peng, Yunfei ^{[1
]}

Zhou, Dongzhan ^{[1
]}

Zhang, Xiqing ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China

来源：

MATERIALS LETTERS | 2015年 / 161卷

基金：

中国国家自然科学基金;

关键词：

ZnO films; Epitaxial growth; Hydrothermal; Sapphire substrate; Optical materials and properties; AL-DOPED ZNO;

D O I：

10.1016/j.matlet.2015.09.048

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-quality ZnO thin film was grown on (0001) sapphire substrate with a ZnO buffer layer by hydrothermal method under atmospheric pressure. The flat surface of the ZnO film was observed by SEM, and the wurtzite crystalline structure and preferred (0001) orientation of the ZnO film was observed by X-ray diffraction. Raman scattering and photoluminescence verified low density of impurities and defects. Test results overall demonstrate the proposed method simply and effectively synthesizes high-quality ZnO film. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：565 / 567

页数：3

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