High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

被引：10
|
作者：
Hwang, Dae-Kue [1 ]
Kim, Kang-Pil [1 ]
Kim, Dae-Hwan [1 ]
机构：
[1] Daegu Gyeongbuk Inst Sci & Technol, Green Energy Res Div, Taegu 711873, South Korea
来源：
THIN SOLID FILMS | 2013年 / 546卷
关键词：
ZnO; Nonpolar; Sputtering; Thin film; II-VI; Compound semiconductor; DEPENDENCE;
D O I：
10.1016/j.tsf.2013.03.063
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nonpolar, a-plane (11 (2) over bar0) ZnO thin films were epitaxially grown on r-plane (11 (1) over bar2) sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O-2 partial pressure of the Ar/O-2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis (11 (2) over bar0) reflections were 0.45 degrees, 0.36 degrees, 0.09 degrees and 0.25 degrees for samples grown at Ar/O-2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O-2 ratio: 1/2), enhancing the lateral growth along the c-axis direction. (c) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：18 / 21
页数：4
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