Pulse electrodeposited copper indium sulpho selenide films and their properties

Copper indium sulpho selenide films of different composition were deposited by the pulse plating technique at 50% duty cycle (15 s ON and 15 s OFF). X-ray diffraction studies indicated the formation of single phase chalcopyrite copper indium sulpho selenide films. Transmission Electron Microscope studies indicated that the grain size increased from 10 nm-40 nm as the selenium content increased. The band gap of the films was in the range of 0.95 eV-1.44 eV. Room temperature resistivity of the films is in the range of 16.0 Omega cm-33.0 Omega cm. Films of different composition used in photoelectrochemical cells have exhibited photo output. Films of composition,CuInS0.Se-9(0.1) have exhibited maximum output, a V-OC of 0.74 V, J(SC) of 18.50 mA cm(-2), ff of 0.75 and efficiency of 11.40% for 60 mW cm(-2) illumination. (C) 2013 Elsevier Ltd. All rights reserved.