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NanoThermoMechanical AND and OR Logic Gates
被引:12
|作者:
Hamed, Ahmed
[1
]
Ndao, Sidy
[1
]
机构:
[1] Univ Nebraska, Mech & Mat Engn Dept, Lincoln, NE 68588 USA
基金:
美国国家科学基金会;
关键词:
THERMAL-CONDUCTIVITY;
D O I:
10.1038/s41598-020-59181-2
中图分类号:
O [数理科学和化学];
P [天文学、地球科学];
Q [生物科学];
N [自然科学总论];
学科分类号:
07 ;
0710 ;
09 ;
摘要:
Today's electronics cannot perform in harsh environments (e.g., elevated temperatures and ionizing radiation environments) found in many engineering applications. Based on the coupling between near-field thermal radiation and MEMS thermal actuation, we presented the design and modeling of NanoThermoMechanical AND, OR, and NOT logic gates as an alternative, and showed their ability to be combined into a full thermal adder to perform complex operations. In this work, we introduce the fabrication and characterization of the first ever documented Thermal AND and OR logic gates. The results show thermal logic operations can be achieved successfully through demonstrated and easy-to-manufacture NanoThermoMechanical logic gates.
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页数:8
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