Defect analysis of carbon nanotubes

被引：0
|
作者：
Dewald, JL [1 ]
Talla, J [1 ]
Pietrass, T [1 ]
Curran, SA [1 ]
机构：
[1] New Mexico State Univ, Dept Phys, Las Cruces, NM 88003 USA
来源：
ELECTRONIC PROPERTIES OF NOVEL NANOSTRUCTURES | 2005年 / 786卷
关键词：
Raman; nanotube; defects;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Raman spectroscopic analysis of plasma treated MVNTs was used characterize defects in MWNTs. Raman spectroscopy was also used to characterize defects induced via acid treatment. The Raman-active disorder modes are used to fingerprint PSF attachment to MWNTs via defect states.
引用
收藏
页码：215 / 219
页数：5
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