Fabrication of vertically aligned single-crystalline boron nanowire arrays and investigation of their field-emission behavior

被引：99
|
作者：
Liu, Fei
Tian, Jifa [2 ]
Bao, Lihong [2 ]
Yang, Tianzhong [2 ]
Shen, Chenming [2 ]
Lai, Xinyu
Xiao, Ziming
Xie, Weiguo
Deng, Saozi
Chen, Jun
She, Juncong
Xu, Nisheng [1 ]
Gao, Hongjun [2 ]
机构：
[1] Sun Yat Sen Univ, State Key Lab Optoelect Mat & Technol, Guangdong Prov Key Lab Display Mat & Technol, Guangzhou 510275, Guangdong, Peoples R China
[2] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100080, Peoples R China
来源：
ADVANCED MATERIALS | 2008年 / 20卷 / 13期
关键词：
D O I：
10.1002/adma.200800137
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Aligned single crystalline boron nanowire arrays are formed by thermal carbon reduction. The SEM image shows an array of boron nanowires (ca. 5 mu m long) vertically aligned in high density on a Si substrate. These nanowires have a high enhancement factor, good emission stability, and can endure high current, which suggest they are an excellent candidate for field-emission applications.
引用
收藏
页码：2609 / +
页数：8
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