Bi4Ti3O12 modified low voltage ZnO-based varistors: microstructure, electrical properties and aging characteristics

被引：3
|
作者：
Zhou, Huanfu [1 ]
Guo, Ruli [1 ,2 ]
Chu, Dongjin [2 ]
Chang, Baocheng [2 ]
Qin, Yuandong [2 ]
Fang, Liang [1 ]
机构：
[1] Guilin Univ Technol, Guangxi Sci Expt Ctr Min Met & Environm, Key Lab New Proc Technol Nonferrous Met & Mat, Coll Mat Sci & Engn,Minist Educ, Guilin 541004, Peoples R China
[2] Guangxi New Future Informat Ind Co Ltd, Beihai 536000, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2013年 / 24卷 / 12期
关键词：
ZINC-OXIDE VARISTORS; CERAMICS;
D O I：
10.1007/s10854-013-1513-7
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The effects of Bi4Ti3O12 addition on the microstructure, electrical properties and aging characteristics of ZnO-based varistors were investigated. The addition of Bi4Ti3O12 can reduce the formation of Zn2TiO4 spinel phase and promote the growth of ZnO grain. Bi4Ti3O12 doped ZnO-based varistors sintered at 1,130 A degrees C possessed excellent performance of I (L) = 2.9 mu A, E (1mA) = 29.7 V/mm, alpha = 30.2, and good surge absorption capability with %a-E-3 (1mA) = -3.5 % for 500 A 8/20 mu s impulse current. In addition, the varistors exhibited the most stable accelerated aging characteristics with %a-E-3 (1mA) = -0.3 % for DC accelerated aging stress of 125 A degrees C/7 h. These results revealed that Bi4Ti3O12 addition is highly beneficial to attain enhanced varistor properties of ZnO ceramics.
引用
收藏
页码：4987 / 4992
页数：6
相关论文
共 50 条
  • [31] DIELECTRIC PROPERTIES OF BI4TI3O12 CRYSTALS
    KRAINIK, NN
    MYLNIKOV.IE
    KOLESNIC.SF
    SOVIET PHYSICS SOLID STATE,USSR, 1968, 10 (01): : 198 - &
  • [32] Preparation and pyroelectric properties of Bi4Ti3O12 based ceramics
    Ichinose, N
    Takahashi, Y
    FERROELECTRICS, 2001, 258 (1-4) : 31 - 36
  • [33] Microstructure and electrical properties of niobium doped Bi4Ti3O12 layer-structured piezoelectric ceramics
    Zhang, LN
    Chu, RQ
    Zhao, SC
    Li, GR
    Yin, QR
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 116 (01): : 99 - 103
  • [34] Electrical Characteristics and Microstructures of Gd-doped Bi4Ti3O12 Ceramics
    Liu, J.
    Chen, M.
    Mei, X. A.
    Sun, Y. H.
    Huang, C. Q.
    CHINESE CERAMICS COMMUNICATIONS II, 2012, 412 : 314 - +
  • [35] Electrical characteristics and microstructures of Gd-doped Bi4Ti3O12 ceramics
    Liu, X. B.
    Sun, Y. H.
    Chen, M.
    Huang, C. Q.
    Liu, J.
    Wan, Z. M.
    HIGH-PERFORMANCE CERAMICS IV, PTS 1-3, 2007, 336-338 : 149 - +
  • [36] Influence of intensive milling on the microstructure and electrical properties of ZnO-Bi2O3-based varistors
    Zhu, Jianfeng
    Qi, Guoquan
    Wang, Lili
    Yang, Haibo
    Wang, Fen
    CERAMICS INTERNATIONAL, 2012, 38 : S463 - S466
  • [37] Electrical characteristics and microstructures of Ce-doped Bi4Ti3O12 films
    Chen, S.
    Cai, A. H.
    Mei, X. A.
    Huang, C. Q.
    An, W. K.
    Chen, M.
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 91 - 94
  • [38] Electrical characteristics and microstructures of (Gd,Dy)-doped Bi4Ti3O12 ceramics
    Cai, Y. H.
    Mei, X. A.
    Chen, M.
    Su, K. L.
    An, W. K.
    Liu, J.
    HIGH-PERFORMANCE CERAMICS V, PTS 1 AND 2, 2008, 368-372 : 88 - 90
  • [39] Electrical Characteristics and Microstructures of Dy-doped Bi4Ti3O12 Ceramics
    Mei, X. A.
    Chen, M.
    Liu, R. F.
    Sun, Y. H.
    Liu, J.
    CHINESE CERAMICS COMMUNICATIONS II, 2012, 412 : 322 - 325
  • [40] Properties of Bi4Ti3O12 thin films grown at low temperatures
    Shibaura Inst of Technology, Tokyo, Japan
    Jpn J Appl Phys Part 1 Regul Pap Short Note Rev Pap, 9 B (5885-5888):
12345