New laser ablation method for non-destructive backside sample preparation

被引:0
|
作者
Beaudoin, F [1 ]
Perdu, P [1 ]
Saviot, F [1 ]
Lewis, D [1 ]
Sallin, F [1 ]
机构
[1] CNES, Toulouse, France
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A new ultra-short pulse laser ablation based backside sample preparation method has been developed. This technique is contact-less, non-thermal, precise, repetitive and adapted to each type of material present in IC packages. Backside preparation examples are presented on a conventional DIL plastic package, on a TSOP plastic package with an oversized silicon die, on a DIL ceramic package and on a CCD device. Feasibility of silicon thinning using laser ablation is also discussed.
引用
收藏
页码:553 / 558
页数:6
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