New laser ablation method for non-destructive backside sample preparation

被引：0

作者：

Beaudoin, F ^{[1
]}

Perdu, P ^{[1
]}

Saviot, F ^{[1
]}

Lewis, D ^{[1
]}

Sallin, F ^{[1
]}

机构：

[1] CNES, Toulouse, France

来源：

ISTFA 2000: PROCEEDINGS OF THE 26TH INTERNATIONAL SYMPOSIUM FOR TESTING AND FAILURE ANALYSIS | 2000年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new ultra-short pulse laser ablation based backside sample preparation method has been developed. This technique is contact-less, non-thermal, precise, repetitive and adapted to each type of material present in IC packages. Backside preparation examples are presented on a conventional DIL plastic package, on a TSOP plastic package with an oversized silicon die, on a DIL ceramic package and on a CCD device. Feasibility of silicon thinning using laser ablation is also discussed.

引用

页码：553 / 558

页数：6

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