Vertical crosslinking MoS2/three-dimensional graphene composite towards high performance supercapacitor

被引:20
|
作者
Han, Chengjie [1 ]
Tian, Zhen [1 ]
Dou, Huanglin [1 ]
Wang, Xiaomin [1 ]
Yang, Xiaowei [2 ]
机构
[1] Taiyuan Univ Technol, Coll Mat Sci & Engn, Taiyuan 030024, Shanxi, Peoples R China
[2] Tsinghua Univ Shenzhen, Res Inst, Shenzhen 518057, Peoples R China
基金
中国国家自然科学基金;
关键词
MoS2; Three-dimensional graphene; Supercapacitor; Vertical crosslinking; Energy storage; MOS2; FOAM; NANOCOMPOSITES; ELECTRODES; NANOSHEETS; GROWTH; OXIDE;
D O I
10.1016/j.cclet.2018.01.017
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Molybdenum disulfide (MoS2) has been stimulated in extensive researches due to its layered structure and the potential as an electrochemical energy material. However, the effects on electrochemical performance of concentration of MoS2 are rarely mentioned. In this paper, the effects of different concentrated layered MoS2 on the morphology and electrochemical properties of the composite of MoS2 and three-dimensional graphene (MoS2/3DG) were discussed. The results show that layered MoS2 was successfully compounded to 3DG and formed a vertical crosslinking structure. It can be observed that MoS2 nanosheets are vertically loaded on the inner and outer surface of graphene when the concentration of MoS2 is 0.20 mg/L. The specific capacitance of composite (MoS2 (0.20 mg/L)/3DG) reaches 2182.33 mF/cm(2) at the current density of 1 mA/cm(2), and the specific capacitance remains 116.83% after 5000 cycles. When the current density increased 100 times (from 1 mA/cm(2) to 100 mA/cm(2)), the specific capacitance retains 78.9%. Meanwhile, the hybrid energy storage devises can deliver an energy density of 130.34 Wh/m(2). The superior electrochemical properties are attributed to the synergistic effect of MoS2 and 3DG. Therefore, the material has a potential application on supercapacitor electrode material. (C) 2018 Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences. Published by Elsevier B.V. All rights reserved.
引用
收藏
页码:606 / 611
页数:6
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