Fabrication of high-density Si and SixGe1-x nanowire arrays based on the single step plasma etching process

被引：8

作者：

Martin, Mickael ^{[1
]}

Avertin, Sebastien ^{[1
]}

Chevolleau, Thierry ^{[1
]}

Dhalluin, Florian ^{[1
]}

Ollivier, Maelig ^{[1
]}

Baron, Thierry ^{[1
]}

Joubert, Olivier ^{[1
]}

Hartmann, Jean Michel ^{[2
]}

机构：

[1] CNRS LTM, F-38054 Grenoble 09, France

[2] CEA LETI, F-38054 Grenoble 09, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2013年 / 31卷 / 04期

关键词：

TRENCHES; FEATURES; PROFILE;

D O I：

10.1116/1.4812792

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dense arrays of silicon and silicon germanium nanowires are fabricated using a top-down approach, which exploits the excellent patterning capabilities of inductively coupled plasmas. Using standard deep UV lithography on a previously deposited silicon oxide hard mask, silicon nanowires with straight and smooth sidewalls and a high aspect ratio greater than 60:1 can be obtained with SF6/O-2/HBr/SiF4 plasma chemistries. The best results are obtained using Cl-2/N-2 high-density plasmas to pattern Si0.5Ge0.5 nanowires with an aspect ratio of 10:1. (C) 2013 American Vacuum Society.

引用

页数：5

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