Selective Area Growth of High-Density GaN Nanowire Arrays on Si(111)

被引：0
|
作者：
Wu, C. H. [1 ]
Lee, P. Y. [1 ]
Chen, K. Y. [1 ]
Cheng, K. Y. [1 ]
机构：
[1] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 30013, Taiwan
来源：
2016 IEEE PHOTONICS SOCIETY SUMMER TOPICAL MEETING SERIES (SUM) | 2016年
关键词：
GaN; nanowires; plasma-assisted molecular beam epitaxy; nanoimprint lithography; photoluminescence; MOLECULAR-BEAM EPITAXY; PHOTOLUMINESCENCE;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Selective-area growth of high-density GaN nanowires on Si(111) substrate by plasma-assisted molecular beam epitaxy is studied. AlN nanopedestals used as nanowires growth seeds are fabricated by nanoimprint lithography. GaN nanowires with hexagonal cross-section show the best optical quality with a strong resonant emission at 3.457eV.
引用
收藏
页码：169 / 170
页数：2
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