Spontaneous luminescence polarizations of wurtzite InGaN/GaN quantum wells

In this paper, we analyze the polarization selection rules of wurtzite InGaN/GaN quantum wells using the k.p perturbation method. It was found that the symmetry properties of the valence subbands' wavefunctions at k(t) not equal 0 are quite different with those at k(t) = 0. These symmetry properties of valence subbands' wavefunctions influence the momentum matrix element for TE and TM modes, leading to a different polarization selection rules from the ones at k(t) = 0 and the absence of spectra peak shift between TE and TM modes. It is suggested that the polarization selection rule at k(t) not equal 0 should be considered in the main transition process for wurtzite III-V semiconductors. (C) 2008 American Institute of Physics. [DOI: 10.1063/1.2999540]