Photoinduced phenomena in As4Se3 amorphous thin films prepared by pulsed laser deposition

被引：16

作者：

Nemec, P. ^{[1
]}

Frumar, M. ^{[1
]}

机构：

[1] Univ Pardubice, Fac Chem Technol, Dept Gen & Inorgan Chem, Pardubice 53210, Czech Republic

来源：

THIN SOLID FILMS | 2008年 / 516卷 / 23期

关键词：

Amorphous materials; Optical properties; Raman scattering; Pulsed laser deposition;

D O I：

10.1016/j.tsf.2008.04.036

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pulsed laser deposition technique was employed for the preparation of amorphous As4Se3 thin films. Raman scattering spectroscopy and variable angle spectroscopic ellipsometry results revealed reversible photostructural effects and metastable photorefraction in annealed films. Observed photoinduced effects are ascribed to reversible transformation of As-4, As4Se3, and As4Se4 structural units to AsSe3, As2Se2 and As3Se entities. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：8377 / 8380

页数：4

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