Mechanism of current hysteresis in reduced rutile TiO2 crystals for resistive memory

被引：37

作者：

Dong, R. ^{[1
]}

Lee, D. S. ^{[1
]}

Pyun, M. B. ^{[1
]}

Hasan, M. ^{[1
]}

Choi, H. J. ^{[1
]}

Jo, M. S. ^{[1
]}

Seong, D. J. ^{[1
]}

Chang, M. ^{[1
]}

Heo, S. H. ^{[1
]}

Lee, J. M. ^{[1
]}

Park, H. K. ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2008年 / 93卷 / 02期

关键词：

D O I：

10.1007/s00339-008-4782-x

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Memory devices based on the reversible resistance switching of various materials are attractive for today's semiconductor technology. The reproducible current hysteresis (resistance switching) characteristics of reduced TiO2 single crystal are demonstrated. Basic models concerning the filamentary and Schottky barrier models are discussed. Good retention characteristics are exhibited by the accurate controlling of the annealing parameters.

引用

页码：409 / 414

页数：6

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