Matrix effects on the structural and optical properties of InAs quantum dots

被引：52
|
作者：
Chen, JX [1 ]
Oesterle, U
Fiore, A
Stanley, RP
Ilegems, M
Todaro, T
机构：
[1] Ecole Polytech Fed Lausanne, Inst Micro & Optoelect, CH-1015 Lausanne, Switzerland
[2] Dipartimento Ingn Innovaz Via Arnesano, Unita INFM, I-73100 Lecce, Italy
来源：
APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 22期
关键词：
D O I：
10.1063/1.1416162
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
InAs quantum dots (QDs) have been grown by molecular-beam epitaxy on different InGaAs or GaAs surface layers to investigate the effect of the matrix on the structural and optical properties of the QDs. The density of QDs directly grown on GaAs is 1.1x10(10) cm(-2), and increases to 2.3x10(10) cm(-2) for dots grown on a 1 nm InGaAs layer. Single-mirror light-emitting-diode (SMLED) structures with InAs QDs capped by InGaAs and grown on GaAs and InGaAs layers were fabricated to compare the electroluminescence efficiency between the two structures. The maximum external quantum efficiency for QDs on a GaAs structure is 1.1% while that for QDs on InGaAs is 1.3%. The corresponding radiative efficiency could be deduced to be 17.5% for QDs on GaAs and 21.5% for QDs on InGaAs, respectively. (C) 2001 American Institute of Physics.
引用
收藏
页码：3681 / 3683
页数：3
相关论文
共 50 条
  • [31] Optical properties of InAs quantum dots: Common trends
    Alessi, MG
    Capizzi, M
    Bhatti, AS
    Frova, A
    Martelli, F
    Frigeri, P
    Bosacchi, A
    Franchi, S
    PHYSICAL REVIEW B, 1999, 59 (11) : 7620 - 7623
  • [32] Morphology and optical properties of InAs(N) quantum dots
    Geelhaar, L. (lutz.geelhaar@infineon.com), 1600, American Institute of Physics Inc. (96):
  • [33] Optical properties of charged InAs-quantum dots
    Schmidt, KH
    Garcia, J
    Medeiros-Ribeiro, G
    Kunze, U
    Petroff, PM
    PROCEEDINGS OF THE FIFTH INTERNATIONAL SYMPOSIUM ON QUANTUM CONFINEMENT: NANOSTRUCTURES, 1999, 98 (19): : 213 - 226
  • [34] Electronic coupling effects on the optical properties and carrier dynamics of InAs quantum dots
    Gurioli, M
    Sanguinetti, S
    Lozzia, S
    Grilli, E
    Guzzi, M
    Frigeri, P
    Franchi, S
    Colocci, M
    Vinattieri, A
    Taddei, S
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 2002, 190 (02): : 577 - 581
  • [35] Structural and optical properties of InAs/AlAsSb quantum dots with GaAs(Sb) cladding layers
    Simmonds, Paul J.
    Laghumavarapu, Ramesh Babu
    Sun, Meng
    Lin, Andrew
    Reyner, Charles J.
    Liang, Baolai
    Huffaker, Diana L.
    APPLIED PHYSICS LETTERS, 2012, 100 (24)
  • [36] Structural and optical properties of buried InAs/GaAs quantum dots on GaAsSb buffer layer
    Wu, Y. H.
    Chang, Li
    Lin, P. Y.
    Chiang, C. H.
    Chen, J. F.
    Chi, T. W.
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2009, 42 (18)
  • [37] Magnetic field effects on optical and transport properties in InAs/GaAs quantum dots
    Larsson, M.
    Moskalenko, E. S.
    Larsson, L. A.
    Holtz, P. O.
    Verdozzi, C.
    Almbladh, C.-O.
    Schoenfeld, W. V.
    Petroff, P. M.
    PHYSICAL REVIEW B, 2006, 74 (24)
  • [38] Effects of GaAsSb capping layer thickness on the optical properties of InAs quantum dots
    Hsu, Wei-Ting
    Liao, Yu-An
    Hsu, Feng-Chang
    Chiu, Pei-Chin
    Chyi, Jen-Inn
    Chang, Wen-Hao
    APPLIED PHYSICS LETTERS, 2011, 99 (07)
  • [39] Manipulation of the structural and optical properties of InAs quantum dots by using various InGaAs structures
    Kim, JS
    Lee, JH
    Hong, SU
    Han, WS
    Kwack, HS
    Lee, CW
    Oh, DK
    JOURNAL OF APPLIED PHYSICS, 2003, 94 (10) : 6603 - 6606
  • [40] Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots
    Ferdos, F
    Wang, SM
    Wei, YQ
    Larsson, A
    Sadeghi, M
    Zhao, QX
    APPLIED PHYSICS LETTERS, 2002, 81 (07) : 1195 - 1197
12345