Tunable Memory Characteristics of Nanostructured, Nonvolatile Charge Trap Memory Devices Based on a Binary Mixture of Metal Nanoparticles as a Charge Trapping Layer

被引：94
|
作者：
Lee, Jang-Sik [1 ]
Kim, Yong-Mu [1 ]
Kwon, Jeong-Hwa [2 ,3 ]
Shin, Hyunjung [1 ]
Sohn, Byeong-Hyeok [2 ,3 ]
Lee, Jaegab [1 ]
机构：
[1] Kookmin Univ, Sch Adv Mat Engn, Seoul 136702, South Korea
[2] Seoul Natl Univ, Dept Chem, Seoul 151747, South Korea
[3] Seoul Natl Univ, NANO Syst Inst, Seoul 151747, South Korea
来源：
ADVANCED MATERIALS | 2009年 / 21卷 / 02期
关键词：
DIBLOCK COPOLYMER MICELLES; HIGH-DENSITY; THIN-FILM; NANOCRYSTAL; TRANSISTORS; ELEMENT; STORAGE; DESIGN; ARRAYS; GATE;
D O I：
10.1002/adma.200800340
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Tunable memory characteristics are investigated according to the metal-nanoparticle species being used in memory devices. The memory devices are fabricated using cliblock copolymer micelles as templates to synthesize nanoparticles of cobalt, gold, and a binary mixture thereof. Programmable memory characteristics show different charging/discharging behaviors according to the storage element configurations as confirmed by nanoscale device characterization.
引用
收藏
页码：178 / +
页数：7
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