High-power GaN-HEMT devices operating at NM-wave frequencies

被引：0
|
作者：
Jha, AR [1 ]
机构：
[1] Jha Tech Consulting Serv, Cerritos, CA 90703 USA
来源：
IRMMW-THz2005: The Joint 30th International Conference on Infrared and Millimeter Waves and 13th International Conference on Terahertz Electronics, Vols 1 and 2 | 2005年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：640 / 641
页数：2
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