High Power LED Thermal and Stress Simulation on Copper Slug

被引：3

作者：

Vairavan, Rajendaran ^{[1
]}

Sauli, Zaliman ^{[1
]}

Retnasamy, Vithyacharan ^{[1
]}

Ismail, Rizalafande Che ^{[1
]}

Nor, Nurul Izza Mohd ^{[1
]}

Nadzri, Nor Shakirina ^{[1
]}

Kamarudin, Hussin ^{[1
]}

机构：

[1] Univ Malaysia Perlis, Sch Microelect Engn, Arau 02600, Perlis, Malaysia

来源：

UKSIM-AMSS 15TH INTERNATIONAL CONFERENCE ON COMPUTER MODELLING AND SIMULATION (UKSIM 2013) | 2013年

关键词：

single GaN chip LED; copper heat slug; junction temperature; ansys; MANAGEMENT; SYSTEM;

D O I：

10.1109/UKSim.2013.150

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

High power LED are captivating attention due to its cogent impacts on lighting industry in terms of efficacy, low power consumption, long lifetime and miniature physical size. Nonetheless, the efficiency and reliability of the LED is signified by the junction temperature. This work demonstrates the thermal and stress simulation of single chip LED package with 1mm x1mm x 1mm copper heat slug. The simulation was performed using Ansys version 11. The GaN LED chip was powered with input power of 0.1 W and 1 W. The simulation outcome exhibited that at the maximum junction temperature and stress of the LED chip were 115.81 degrees C and 221.56MPa correspondingly for input power of 1W.

引用

页码：294 / 298

页数：5

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