Electron impact ionization of helium isoelectronic systems

被引:1
|
作者
Bernshtam, V. A. [2 ]
Ralchenko, Yu. [1 ]
Maron, Y. [2 ]
机构
[1] Natl Inst Stand & Technol, Gaithersburg, MD 20899 USA
[2] Weizmann Inst Sci, Fac Phys, IL-76100 Rehovot, Israel
来源
EUROPEAN PHYSICAL JOURNAL D | 2009年 / 51卷 / 03期
关键词
34.80.Dp Atomic excitation and ionization;
D O I
10.1140/epjd/e2009-00002-4
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We show that the criticism [Eur. Phys. J. D 49, 167 (2008)] of our empirical formula for electron-impact ionization of atomic ions [J. Phys B. 33, 5025 (2000)] is unjustified.
引用
收藏
页码:319 / 320
页数:2
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