Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO

被引：179

作者：

Zhang, C. ^{[1
]}

Fukami, S. ^{[2
,3
]}

Sato, H. ^{[2
,3
]}

Matsukura, F. ^{[1
,2
,4
]}

Ohno, H. ^{[1
,2
,3
,4
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Nanoelect & Spintron, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Ctr Spintron Integrated Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

[3] Tohoku Univ, Ctr Innovat Integrated Elect Syst, Aoba Ku, Sendai, Miyagi 9800845, Japan

[4] Tohoku Univ, WPI Adv Inst Mat Res, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 01期

关键词：

MGO;

D O I：

10.1063/1.4926371

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We study the device size dependence of spin-orbit torque induced magnetization switching in a Ta/CoFeB/MgO structure with perpendicular easy axis. The miniaturization of the device from micrometer-sized wire to 80-nm dot results in the increase of the threshold current density Jth by one order, whereas Jth increases only slightly with further reducing the device size down to 30 nm. No significant increase in Jth is seen, as the current pulse width decreases from 100 ms down to 3 ns. We reveal that the switching in devices at reduced size is reasonably well explained by the macrospin model, in which the effects of both the Slonczewski-like torque and field-like torque are included. (C) 2015 AIP Publishing LLC.

引用

页数：4

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