Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron

被引:4
|
作者
Kim, Taeyueb [1 ]
Park, HeeGyum [1 ,2 ]
Han, Ki-Hyuk [1 ,3 ]
Nah, Young-Jun [1 ]
Koo, Hyun Cheol [1 ,3 ]
Min, Byoung-Chul [1 ,2 ]
Hong, Seokmin [1 ]
Lee, OukJae [1 ]
机构
[1] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
[2] Univ Sci & Technol Korea UST, Daejeon 34113, South Korea
[3] Korea Univ, KU KIST Grad Sch, Seoul, South Korea
基金
新加坡国家研究基金会;
关键词
Compendex;
D O I
10.1063/5.0090577
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized "0" and "1" with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing. (c) 2022 Author(s).
引用
收藏
页数:6
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