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Demonstration of in-plane magnetized stochastic magnetic tunnel junction for binary stochastic neuron
被引:4
|作者:
Kim, Taeyueb
[1
]
Park, HeeGyum
[1
,2
]
Han, Ki-Hyuk
[1
,3
]
Nah, Young-Jun
[1
]
Koo, Hyun Cheol
[1
,3
]
Min, Byoung-Chul
[1
,2
]
Hong, Seokmin
[1
]
Lee, OukJae
[1
]
机构:
[1] Korea Inst Sci & Technol, Ctr Spintron, Seoul 02792, South Korea
[2] Univ Sci & Technol Korea UST, Daejeon 34113, South Korea
[3] Korea Univ, KU KIST Grad Sch, Seoul, South Korea
基金:
新加坡国家研究基金会;
关键词:
Compendex;
D O I:
10.1063/5.0090577
中图分类号:
TB3 [工程材料学];
学科分类号:
0805 ;
080502 ;
摘要:
A binary stochastic neuron (BSN) or a probabilistic bit (p-bit) randomly fluctuates between digitized "0" and "1" with a controllable functionality of time-averaged value. Such an unconventional bit is the most essential building block for the recently proposed stochastic neural networks and probabilistic computing. Here, we experimentally implement a magnetic tunnel junction (MTJ) for BSN, with relaxation times on the order of tens of milliseconds that can be modulated by a current-induced spin-transfer torque. The NIST Statistical Test Suite (800-22a) is used to verify true random number generation by the BSN-MTJ device. Our results suggest the possibility of using the artificial BSN MTJ device in neuromorphic applications as well as in a recently proposed probabilistic computing. (c) 2022 Author(s).
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页数:6
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