Over 57% Efficiency C-band GaN HEMT High Power Amplifier with Internal Harmonic Manipulation Circuits

被引：0

作者：

Otsuka, H. ^{[1
]}

Yamanaka, K. ^{[1
]}

Noto, H. ^{[1
]}

Tsuyama, Y. ^{[2
]}

Chaki, S. ^{[3
]}

Inoue, A. ^{[1
]}

Miyazaki, M. ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Informat Technol R&D Ctr, 5-1-1 Ofuna, Kanagawa 2478501, Japan

[2] Mitsubishi Electr Corp, Commun Syst Ctr, Amagasaki, Hyogo 6618661, Japan

[3] Mitsubishi Electr Corp, High Frequency & Opt Dev Works, Itami, Hyogo 6648641, Japan

来源：

2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4 | 2008年

关键词：

GaN HEMT; High power amplifier; High efficiency; Harmonic manipulation;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, a high efficiency C-band GaN HEMT high power amplifier with internal harmonic manipulation circuits is presented. We employed a new circuit topology for simultaneous high efficiency matching at both fundamental and 2nd-harmonic frequencies. The developed GaN HEMT amplifier has achieved over 57% drain efficiency (50% power-added-efficiency) with 100W output power at C-band. This is the state-of-the-art efficiency of GaN HEMT high power amplifier at C-band to the best of our knowledge.

引用

页码：310 / +

页数：2

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