A C-Band high efficiency second harmonic tuned hybrid power amplifier in GaN technology

被引：0
|
作者：
Colantonio, P. [1 ]
Giannini, F. [1 ]
Giofre, R. [1 ]
Limiti, E. [1 ]
Serino, A. [1 ]
Peroni, M. [1 ]
Romanini, P. [1 ]
Proietti, C. [1 ]
机构：
[1] Univ Roma Tor Vergata, Dept Elect Engn, I-00133 Rome, Italy
来源：
35TH EUROPEAN MICROWAVE CONFERENCE, VOLS 1-3, CONFERENCE PROCEEDINGS | 2005年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this contribution a C-Band 2(nd) harmonic tuned hybrid power amplifier utilizing a PHEMT GaN device is presented, together with technological aspects, non linear device model and adopted design criteria. The amplifier has been realised in hybrid form, exhibiting a bandwidth larger than 20% around 5.5GHz, with a minimum output power of 33 dBm, and a drain efficiency of 60% at the centre frequency.
引用
收藏
页码：1619 / 1622
页数：4
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