Influence of compensation on the luminescence of nitrogen-doped ZnSe epilayers grown by MOVPE

被引：23
|
作者：
Heitz, R
Moll, E
Kutzer, V
Wiesmann, D
Lummer, B
Hoffmann, A
Broser, I
Baume, P
Taudt, W
Sollner, J
Heuken, M
机构：
[1] UNIV BREMEN,INST FESTKORPERPHYS,D-28334 BREMEN,GERMANY
[2] RHEIN WESTFAL TH AACHEN,INST HALBLEITERTECH,D-52056 AACHEN,GERMANY
来源：
JOURNAL OF CRYSTAL GROWTH | 1996年 / 159卷 / 1-4期
关键词：
D O I：
10.1016/0022-0248(95)00817-9
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The luminescence of ZnSe grown by metalorganic vapour phase epitaxy and doped by a DC nitrogen plasma is investigated. With increasing N-2 flux the donor-acceptor pair (DAP) band continuously develops into a structureless band peaking at 2.62 eV for highest doping levels. This broad band evolves back into a structured DAP band peaking at 2.698 eV with increasing excitation density. At high N concentrations and at large degree of compensation potential fluctuations become important for the spatially indirect DAP recombination. These fluctuations can easily be screened by optically excited carriers making the experimental conditions decisive for luminescence spectra of strongly doped ZnSe:N samples.
引用
收藏
页码：307 / 311
页数：5
相关论文
共 50 条
  • [41] Nitrogen doping of MOVPE-grown ZnSe by hydrazine derivatives
    Pohl, UW
    Gottfriedsen, J
    Schumann, H
    JOURNAL OF CRYSTAL GROWTH, 2000, 209 (04) : 683 - 686
  • [42] HIGH-CONCENTRATION NITROGEN DOPING IN MOVPE GROWN ZNSE
    OHKI, A
    SHIBATA, N
    ANDO, K
    KATSUI, A
    JOURNAL OF CRYSTAL GROWTH, 1990, 99 (1-4) : 413 - 417
  • [43] Nitrogen incorporation and growth kinetics of GaAsN/GaAs epilayers grown by MOVPE
    Auvray, L
    Dumont, H
    Dazord, J
    Monteil, Y
    Bouix, J
    NEW METHODS, MECHANISMS AND MODELS OF VAPOR DEPOSITION, 2000, 616 : 189 - 194
  • [44] THE INFLUENCE OF NITROGEN ON THE P-CONDUCTIVITY IN ZNSE EPILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    HOFFMANN, A
    LUMMER, B
    ECKEY, L
    KUTZER, V
    FRICKE, C
    HEITZ, R
    BROSER, I
    KURTZ, E
    JOBST, B
    HOMMEL, D
    JOURNAL OF CRYSTAL GROWTH, 1994, 138 (1-4) : 1073 - 1074
  • [45] THERMAL-STABILITY OF NITROGEN-DOPED ZNSE GROWN BY MOLECULAR-BEAM EPITAXY
    NISHIKAWA, Y
    ISHIKAWA, M
    PARBROOK, PJ
    ONOMURA, M
    SAITO, S
    HATAKOSHI, GI
    JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) : 807 - 811
  • [46] Characterization of compensating centers in nitrogen-doped ZnSe
    Zhu, ZQ
    Yao, T
    Cavenett, BC
    Prior, KA
    BLUE LASER AND LIGHT EMITTING DIODES II, 1998, : 69 - 73
  • [47] ATOMIC LAYER EPITAXY OF NITROGEN-DOPED ZNSE
    TAKEMURA, Y
    KONAGAI, M
    YAMASAKI, K
    LEE, CH
    TAKAHASHI, K
    JOURNAL OF ELECTRONIC MATERIALS, 1993, 22 (05) : 437 - 440
  • [48] DEEP CENTER PHOTOLUMINESCENCE IN NITROGEN-DOPED ZNSE
    HAUKSSON, IS
    WANG, SY
    SIMPSON, J
    PRIOR, KA
    CAVENETT, BC
    LIU, W
    SKROMME, BJ
    PHYSICA SCRIPTA, 1994, 54 : 20 - 23
  • [49] Raman study of nitrogen-doped ZnSSe/GaAs epilayers
    Kontos, AG
    Raptis, YS
    Strassburg, M
    Pohl, UW
    Bimberg, D
    THIN SOLID FILMS, 2003, 428 (1-2) : 185 - 189
  • [50] Structural properties of MOVPE-grown ZnMgSe epilayers and ZnSe/ZnMgSe MQWs on (100) GaAs
    Prete, P
    Lovergine, N
    Tapfer, L
    Mancini, AM
    OPTICAL MATERIALS, 2001, 17 (1-2) : 207 - 210
12345