Enhanced field emission properties from AlN nanowires synthesized on conductive graphite substrate

被引：18

作者：

Chen, Fei ^{[1
,2
,3
]}

Ji, Xiaohong ^{[1
]}

Zhang, Qinyuan ^{[1
,2
,3
]}

机构：

[1] S China Univ Technol, Sch Mat Sci & Engn, Guangzhou 510641, Peoples R China

[2] S China Univ Technol, State Key Lab Luminescent Mat & Devices, Guangzhou 510641, Peoples R China

[3] S China Univ Technol, Inst Opt Commun Mat, Guangzhou 510641, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2015年 / 646卷

基金：

中国国家自然科学基金;

关键词：

AlN nanowires; Graphite sheet; Field emission property; ALUMINUM NITRIDE; ELECTRON-EMISSION; GROWTH; NANOSTRUCTURES; PERFORMANCE; ARRAYS;

D O I：

10.1016/j.jallcom.2015.05.236

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Large-scale AlN nanowires have been grown on flexible and conductive graphite substrate through the catalyst-free chemical vapor deposition (CVD). All the as-grown samples are hexagonal wurtzite structure and grow preferentially along the c-axis. The comparative study on the field emission (FE) properties of AlN nanowires grown on graphite sheet and Si substrates indicates that AlN nanowires grown directly on conductive substrates exhibit good FE properties with low turn on field of 4.9 V/mm at a current density of 10 mA/cm(2) and low threshold field of 6.7 V/mm at 1 mA/cm(2). The enhanced FE property is due to the tapered structures of nanowires with sharp tips and high aspect ratio, and the better electrical contact between conductive graphite substrate and field emitters. These results demonstrate the potential applications of the AlN nanowires grown on graphite sheet in optoelectronic and field-emission nanodevices. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：879 / 884

页数：6

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