Fabrication and field emission characteristics of lateral diamond field emitter

被引：0
|
作者：
Kang, WP [1 ]
Wisitsora-At, A [1 ]
Howell, M [1 ]
Jamuhadin, A [1 ]
Wong, YM [1 ]
Soh, KL [1 ]
Davidson, JL [1 ]
Kerns, DV [1 ]
机构：
[1] Vanderbilt Univ, Dept Elect & Comp Engn, Nashville, TN 37235 USA
来源：
IVMC 2000: PROCEEDINGS OF THE 14TH INTERNATIONAL VACUUM MICROELECTRONICES CONFERENCE | 2001年
关键词：
D O I：
10.1109/IVMC.2001.939760
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Lateral diamond field emitter was fabricated by diamond patterning technique that utilized oxide patterning and lift-off process on a silicon-on-insulator (SOI) wafer. An anode-cathode spacing of 2 mum between the diamond anode and cathode was achieved. The fabricated lateral emitter diode exhibits excellent emission characteristics with a low turn-on voltage of 5 V and a high emission current of 6 muA from 4 diamond fingers at anode voltage of 25 V. The low turn-on voltage represents one of the best reported lateral field emitter structures. Lateral diamond field emitter is a promising candidate for vacuum microelectronic applications.
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收藏
页码：275 / 276
页数：2
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