FABRICATION AND CHARACTERIZATION OF LATERAL FIELD-EMITTER TRIODES

被引:29
|
作者
KANEMARU, S
ITOH, J
机构
[1] Electrotechnical Laboratory, Tsukuba-Shi, Ibaraki 305
关键词
D O I
10.1109/16.88521
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have fabricated a field-emitter triode with tungsten electrodes arranged laterally on a quartz glass substrate by using the photolithography and dry etching techniques. The device consists of an array of 170 field-emitter tips with a 10-mu-m pitch, a columnar gate, and an anode. The emission characteristics followed the Fowler-Nordheim tunneling theory. The mutual conductance was about 0.02-mu-S at an anode voltage of 300 V. We have improved the fabrication process to obtain an emitter with an operating voltage of about 100 V.
引用
收藏
页码:2334 / 2336
页数:3
相关论文
共 50 条
  • [1] FABRICATION AND CHARACTERIZATION OF COMB-SHAPED LATERAL FIELD-EMITTER ARRAYS
    ITOH, J
    TSUBURAYA, K
    KANEMARU, S
    WATANABE, T
    ITOH, S
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (3A): : 1221 - 1226
  • [2] Fabrication and characterization of lateral poly-Si tetrode field-emitter arrays
    Lee, JH
    Lee, MB
    Rue, GH
    Choi, HC
    Hahm, SH
    Lee, JH
    Lee, JH
    Choi, KM
    Kwon, DH
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2000, 37 (06) : 1021 - 1025
  • [3] Fabrication and characterization of silicon carbide field-emitter array
    van Zuuk, A
    Heerkens, CTH
    van Veen, AHV
    Teepen, TF
    Wieland, MJ
    Groening, O
    Kruit, P
    [J]. MICROELECTRONIC ENGINEERING, 2004, 73-4 : 106 - 110
  • [4] COLLECTOR-ASSISTED OPERATION OF MICROMACHINED FIELD-EMITTER TRIODES
    BUSTA, HH
    POGEMILLER, JE
    ZIMMERMAN, BJ
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (08) : 1537 - 1542
  • [5] Fabrication and characterization of p-type silicon field-emitter arrays for lithography
    Teepen, TF
    van Veen, AHV
    van't Spijker, H
    Steenbrink, SWHK
    van Zuuk, A
    Heerkens, CTH
    Wieland, MJ
    van Druten, NJ
    Kruit, P
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2005, 23 (02): : 359 - 369
  • [6] Fabrication of CNT field-emitter array using a polymer insulator
    Nishimura, K
    Yasuda, N
    Shiroishi, T
    Hosono, A
    Nakata, S
    Okuda, S
    [J]. JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY, 2005, 13 (09) : 719 - 725
  • [7] Fabrication of ZnO Nanowire Field-Emitter Arrays With Focusing Capability
    Liu, Yuanming
    Zhao, Long
    Zhang, Zhipeng
    Chen, Daokun
    Zhang, Guofu
    She, Juncong
    Deng, Shaozhi
    Xu, Ningsheng
    Chen, Jun
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2018, 65 (05) : 1982 - 1987
  • [8] Fabrication and characterization of phosphorus-implanted mold-type diamond field-emitter arrays
    Cho, ES
    Kwon, SJ
    Yang, HC
    Uh, HS
    Kim, YH
    Park, BG
    Lee, JD
    [J]. THIN SOLID FILMS, 2003, 435 (1-2) : 324 - 328
  • [9] Fabrication and field emission characteristics of LaB6 field-emitter arrays
    Wang, Xiao-Ju
    Jiang, Ya-Dong
    Lin, Zu-Lun
    Qi, Kang-Cheng
    Chen, Ze-Xiang
    [J]. Qiangjiguang Yu Lizishu/High Power Laser and Particle Beams, 2008, 20 (02): : 304 - 308
  • [10] Molybdenum field-emitter arrays
    Spindt, CA
    Brodie, I
    [J]. IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, : 289 - 292